1/4 rev.b structure silicon monolithic integrated circuit type 8 channel switching regulator controller and 1 series regulator for dvc product series ? features ? 8 dc/dc controller,1 series regulator ? dc/dc controller: fet direct driver (pch driver:7ch, nch driver:1ch) ? series regulator: variable output voltage stable with ceramic output capacitor ? package: vqfp48c(0.5mm pitch) absolute maximum ratings ta=25 parameter symbol limits units power supply voltage1 vcc,vin2345,vin6789 12 v power supply voltage2 vin1 12 v power dissipation pd 600(*1) mw 950(*2) mw operating temperature topr -25 +85 storage temperature tstg -55 +125 (*1) without external heat sink, t he power dissipation degrades by 6.0mw/ above 25 . (*2) power dissipation degrades by 9.5mw/ above 25 , when mounted on a pcb (70.0mm 70.0mm 1.6mm). recommended operating conditions ta=-25 +75 parameter symbol spec. units power supply voltage vcc,vin2345,vin6789 4.0 10 v vin1 2.8 10 oscillator frequency fosc 100khz 1.2mhz status of this document
2/4 rev. b electrical characteristics ta=25 vcc=7v, vin1=7v stb=3v, unless otherwise specified parameter symbol spec. units conditions. min. typ. max dc/dc controller reference voltage reference voltage vref 2.475 2.500 2.525 v line regulation dvli - - 10 mv vcc=4.0v 10v load regulation dvlo - - 10 mv iref=-0.1ma -1.0ma short-circuit output current ios -40 -12 -5 ma vref=0v load regulation short-circuit output current1(vcc) vstd1 3.55 3.65 3.75 v vcc monitor sweep down hysteresis width (vcc) vst1 0.6 0.11 0.16 v threshold voltage 2(vref) vstd2 2.2 2.3 2.4 v vref monitor soft start soft standby voltage vsso1 - 10 100 mv input source current isoft1 -2.0 -1.0 -0.5 a protection circuit inv threshold voltage vscpth 0.65 0.75 0.85 v ch2,3,4,5,6,7, inv voltage l detect scp output current iscp -3.0 -2.0 -1.5 a vscp=0.75v scp threshold voltage vtsc 1.4 1.5 1.6 v scp standby voltage vssc - 10 100 mv triangular wave oscillator oscillator frequency fosc 580 680 780 khz rt=11kohm,ct=180pf frequency stability (vcc) df - 0.3 2 % vcc=4.0 10v rt output voltage vrt 0.95 1.00 1.05 v dc/dc controller reference voltage vthea 0.980 1.00 1.020 v ch2,3,4,5,6,7 reference voltage vofst - - 10 mv ch8,9 line regulation ibias1 -150 0 150 na ch2,3,4,5,6,7 inv pin load regulation ibias2 -170 -40 - na ch8,9 inv pin short-circuit output current ibias3 -170 -40 - na ch8,9 non pin load regulation av 50 65 80 db dc design guarantee short-circuit output current1(vcc) bw 0.5 1 2 mhz av=0db design guarantee hysteresis width (vcc) vfbh vref -0.1 - - v threshold voltage 2(vref) vfbl - - 0.1 v soft start isink1 1.3 2.6 3.9 ma soft standby voltage isink2 3.4 6.7 10 ma input source current isource1 -240 -150 -90 a protection circuit isource2 -280 -190 -130 a inv threshold voltage vcm 0 - vcc-2 v pwm comparator input threshold voltage 2,3,4,5,6,7,8,9 vt0 1.730 1.820 1.910 v duty0% vt100 2.090 2.180 2.270 v duty100% fet driver on resistance ronhi1 7 14 21 vg2,3,4,5,6,7,8,9 vg= ? h ? ronlo1 6 12 18 vg2,3,4,5,6,7,8,9 vg= ? l ? current ability isink1 70 170 250 ma vg2,3,4,5,6,7,8,9 vg= ? l ? i source1 -240 -160 -80 ma vg2,3,4,5,6,7,8,9 vg= ? h ? control stb threshold voltage vstb 1.0 1.5 2.0 v stb input current istb - - 30 a stb=3v stb5,6 threshold voltage vstb5,6 1.0 1.5 2.0 v stb5,6 input current istb5,6 - - 30 a stb5,6=3v circuit current standby current iccs - 0 5 a stb=0v circuit current on driving icc 1 5 10 ma series regulator output voltage vo1 2.94 3.00 3.06 v r1=200k ? ,r2=100k ? refer to below figure reference voltage vfb1 0.98 1.00 1.02 v output current ability io1 300 - - ma the difference between input voltage and output voltage dv1 70 120 250 mv vin1=vout1x0.97, iout1=20ma line regulation11 dvli11 - 4 10 mv vin1=4v to10v iout1=100ma line regulation12 dvli12 - 4 10 mv vin1=3.5v to10v iout1=10ma load regulation1 dvlo1 - 10 30 mv iout1=1ma to 100ma load regulation2 dvlo2 - 30 90 mv iout1=1ma to 300ma short-circuit output current ios1 -140 -70 -35 ma vout1=0v circuit current ivin1 40 80 160 a iout1=0ma vout1 pin connect capacitor cout 2 . 2 f
3/4 rev. b package dimensions pin description block diagram C 1 inv5 error amp inverted input ch5) 2 fb5 error amp output (ch5) 3 inv6 error amp inverted input ch6) 4 fb6 error amp output (ch6) 5 inv7 error amp inverted input ch7) 6 fb7 error amp output (ch7) 7 non8 error amp non-inverted input ch8) 8 inv8 error amp inverted input ch8) 9 fb8 error amp output (ch8) 10 non9 error amp non-inverted input ch9) 11 inv9 error amp inverted input ch9) 12 fb9 error amp output (ch9) 13 vg9 fet driver output (ch9) 14 vg8 fet driver output (ch8) 15 vin6789 power supply for the output circuit (ch6,7,8,9) 16 pgnd6789 power ground for the output circuit (ch6,7,8,9) 17 vg7 fet driver output (ch7) 18 vg6 fet driver output (ch6) 19 vg5 fet driver output (ch5) 20 vg4 fet driver output (ch4) 21 vin2345 power supply for the output circuit (ch2,3,4,5) 22 pgnd2345 power ground for the output circuit (ch2,3,4,5) 23 vg3 fet driver output (ch3) 24 vg2 fet driver output (ch2) 25 fb2 error amp output (ch2) 26 inv2 error amp inverted input ch2) 27 fb3 error amp output (ch3) 28 inv3 error amp inverted input ch3) 29 stb sw for ch2 9 hi operating 30 gnd ground 31 fb4 error amp output (ch4) 32 inv4 error amp inverted input ch4) 33 stb5 sw for ch5 hi operating 34 stb6 sw for ch6 hi operating 35 stb1 sw for ch1 hi operating 36 vout1 series regulator output 37 vin1 power supply for series regulator 38 fb1 amp inverted input 39 n.c. non-connected pin 40 scp a capacitor is placed to set up the delay time of the scp 41 soft soft start/this pin connects to a capacitor to set up the start-up time 42 vref reference voltage output pin 43 vcc power supply for dc/dc 44 ct a capacitor is to set up the triangular-wave frequency 45 rt a resistor is to set up the triangular-wave frequency 46 dtc5 dead time control pin for ch5 47 dtc6 dead time control pin for ch6 48 dtc7 dead time control pin for ch7.and this pin connects to a capacitor to set up the start-up time. vqfp48c unit:mm
4/4 rev. b output pin vcc back current prevention diode bypass diode operation notes 1) absolute maximum ratings use of the ic in excess of absolute maximum ratings such as the applied voltage or operating temperature range may result in ic deterioration or damage. assumptions should not be made regard ing the state of the ic (short mode or open mode) when such damage is suffered. a physical safety measure such as a fuse should be im plemented when use of the ic in a special mode where the absolute maximum ratings may be exceeded is anticipated. 2) gnd potential ensure a minimum gnd pin potential in all operating conditions. in addition, ensure that no pins other than the gnd pin carry a voltage lower than or equal to the gnd pin, including during actual transient phenomena. 3) thermal design use a thermal design that allows for a sufficient margin in li ght of the power dissipation (pd) in actual operating conditions. 4) inter-pin shorts and mounting errors use caution when orienting and positioning the ic for mounting on printed circuit boards. improper mounting may result in damag e to the ic. shorts between output pins or between output pins and the power supply and gnd pin caused by the presence of a foreign object may resu lt in damage to the ic. 5) operation in a strong electromagnetic field use caution when using the ic in the presence of a strong electromagnetic field as doin g so may cause the ic to malfunction. 6) thermal shutdown ci rcuit (tsd circuit) this ic incorporates a built-in thermal sh utdown circuit (tsd circuit). the tsd circui t is designed only to shut the ic off to prevent runaway thermal operation. do not continue to use the ic after operating this circuit or use the ic in an environment where the operation of th e thermal shutdown circuit is assumed. 7) testing on application boards when testing the ic on an application board, connecting a capacit or to a pin with low impedance subjects the ic to stress. alwa ys discharge capacitors after each process or step. ground the ic during asse mbly steps as an antistatic me asure, and use similar caution wh en transporting or storing the ic. always turn the ic's power supply off before connecting it to or remo ving it from a jig or fixture during the i nspection process. 8) common impedance power supply and ground wiring should reflect consideration of the need to lower common impedance and minimize ripple as much a s possible (by making wiring as short and thick as possible or rejectin g ripple by incorporating inductance and capacitance). 9) applications with modes that reverse vcc and pin po tentials may cause damage to internal ic circuits. for example, such damage might occur when vcc is shorted with the gnd pin while an external capacitor is charged. it is recomm ended to insert a diode for preventing back current flow in series with vcc or bypass diodes between vcc and each pin. 10) timing resistor timing resistor connected between rt and gnd, has to be placed near rt terminal (45pin). with th e connection must be as short a s possible. 11) ic pin input this monolithic ic contains p+ isolation and pcb layers between adjacent elements in order to keep them isolated. p/n junctions are formed at the intersection of these p layers wi th the n layers of other elements to create a variety of paras itic elements. for example, when a resistor and transistor are connected to pins as shown in follow chart, ? the p/n junction functions as a parasitic diode when gnd > (pin a) for the resistor or gnd > (pin b) for the transistor (npn). ? similarly, when gnd > (pin b) for the transistor (npn), the parasitic diode described above combines with the n layer of other adjacent elements to operate as a parasitic npn transistor. the formation of parasitic elements as a re sult of the relationships of the potentials of different pins is an inevitable resul t of the ic's architecture. the operation of parasitic elements can cause interf erence with circuit operation as well as ic malfunction and d amage. for these reasons, it is necessary to use caution so that the ic is not used in a way that will trigger the operation of parasitic elements, such as by the application of voltages lower than the gnd (pcb) voltage to input and output pins. p substrate parasitic diode resistance transistor (npn) (pinb) (pina) (pina) parasitic elementals parasitic diode (pinb) p substrate other adiacent components parasitic diode
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